The 0.34 nm gate-length side-wall monolayer MoS2 transistor device structure and characterization. Credit: Nature (2022). DOI: 10.1038/s41586-021-04323-3A team of researchers working at Tsinghua University in China has created a sub-1-nm gate in a MoS2 transistor. In their paper published in the journal Nature, the group outlines how they created the super tiny gate and explains why they believe it will be difficult for anyone to beat their record. For most of the history of microcomputing, Moore's Law has held up—researchers and engineers have managed to double the speed and capability of computers regularly by reducing the size of their components....