CHAMPAIGN, Ill. Researchers at the University of Illinois at Urbana-Champaign have broken their own record for the world's fastest transistor. Their latest device, with a frequency of 509 gigahertz, is 57 gigahertz faster than their previous record holder and could find use in applications such as high-speed communications products, consumer electronics and electronic combat systems."The steady rise in the speed of bipolar transistors has relied largely on the vertical scaling of the epitaxial layer structure to reduce the carrier transit time," said Milton Feng, the Holonyak Professor of Electrical and Computer Engineering at Illinois, whose team has been working on...