[spunkets]

"parallel diode, resistor pair"

The logic element is a gate. It's composed of a titanium dioxide junction in a cross configuration. The current is composed of 2 carriers, electrons and ions. The Ti⁴⁺ is the most mobile. The ionic current sets up a space charge, which results in a change in the electronic resistivity in both directions. The current through the junction creates the effective diode.

I'd assume a change in spin states was involved here, because memristance(M) is dφ/dq, where φ is the magnetic flux. ie. L=dφ/dI. The equivalent of ohms law for the device is v(t)=M(q(t))i(t), so the resistance(memristance) depends on the integral of the current through the device.

[Myrddin]

Thanks for the details. The bi-directional nature of the device will likely provide elegant solutions to designs previously constrained by unidirectional signal paths.

[DManA]

You sound knowledgeable on the subject. If there was such a need for this device, couldn’t it have been simulated with a circuit containing active devices?