And what kind of focusing system could they be using? Must be the mirrors, for UV lenses transmission drops like stone about 180-200nm.
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SANTA CLARA, Calif., Jan. 25, 2006 Intel Corporation today announced it has become the first company to reach an important milestone in the development of 45 nanometer (nm) logic technology. Intel has produced what are believed to be the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next generation, highvolume semiconductor manufacturing process.
Achieving this milestone means Intel is on track to manufacture chips with this technology in 2007 using 300mm wafers, and continues the companys focus on pushing the limits of Moores Law, by introducing a new process generation every two years.
Today, Intel leads the industry in volume production of semiconductors using 65nm process technology, with two manufacturing facilities making 65nm chips in Arizona and Oregon and two more coming online this year in Ireland and Oregon.
Being first to high volume with 65nm process technology and the first with a working 45nm chip highlights Intels leadership position in chip technology and manufacturing, said Bill Holt, vice president, general manger, Intel Technology and Manufacturing Group. Intel has a long history of translating technology leaps into tangible benefits that people appreciate. Our 45nm technology will provide the foundation for delivering PCs with improved performanceper watt that will enhance the user experience.
Intels 45nm process technology will allow chips with more than five times less leakage power than those made today. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms.
The 45nm SRAM chip has more than 1 billion transistors. Though not intended as an Intel product, the SRAM demonstrates technology performance, process yield and chip reliability prior to ramping processors and other logic chips using the 45nm manufacturing process. It is a key first step in the march toward highvolume manufacturing of the worlds most complex devices.
In addition to the manufacturing capabilities of its D1D facility in Oregon, where the initial 45nm development efforts are underway, Intel has announced two highvolume fabs under construction to manufacture chips using the 45nm process technology: Fab 32 in Arizona and Fab 28 in Israel.
Listen to a recorded interview with Intel senior fellow Mark Bohr by clicking the Manufacturing channel at http://intel.feedroom.com.
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