California Inventors DevelopThomas W. Tombler of Goleta, Calif., and Brian Y. Lim of Simi Valley, Calif., have developed a method of making a transistor device.
Carbon Nanotube Transistor
Device Fabrication Method
US Fed News
December 3, 2007
According to the U.S. Patent & Trademark Office: "During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure."
An abstract of the invention, released by the Patent Office, said: "The gate electrode may be formed and extend into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications."
The inventors were issued U.S. Patent No. 7,301,191 on Nov. 27.
The patent has been assigned to Atomate Corp., Simi Valley.
The original application was filed on Aug. 22, 2006, and is available here.
Patents like this make me wonder if they actually got it to work or if they just thought of it in hopes someone else could get it to work so they could sue them. I’m wishing back to the old days when you actually had deliver a working device to the USPTO.