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AMD Announces Technology to Enable Ten-Fold Performance Leap in Future Transistors
AMD.com ^ | 9-9-2002 | AMD Press Release

Posted on 09/10/2002 1:50:40 AM PDT by JameRetief

AMD Announces Technology to Enable Ten-Fold Performance Leap in Future Transistors

World's smallest version of innovative design can foster better products and lower manufacturing costs

Sunnyvale, CA -- September 10, 2002 --AMD today announced it has fabricated the smallest double-gate transistors reported to date using industry standard technology. These transistors, measuring ten nanometers, or ten billionths of a meter in length (gate), are six times smaller than the smallest transistors currently in production. AMD's research breakthrough could foster the placement of a billion transistors on the same size chip that currently holds 100 million transistors, enabling a vastly richer computing experience.

Transistors are the miniscule on/off switches that make up the integrated circuits in today's microprocessors. A double-gate transistor structure effectively doubles the electrical current that can be sent through a given transistor. The Fin Field Effect Transistor (FinFET) design relies upon a thin vertical silicon "fin" to help control leakage of current through the transistor when it is in the "off" stage. This design combination allows for the creation of new chips with enhanced performance and ever-shrinking geometries.

"Transistor development is essential to the creation of higher-performing products for our customers," said Craig Sander, AMD's vice president of Technology Development. "The entire semiconductor industry is working to meet the increasing challenges of developing new transistor designs that are smaller and higher-performing and yet can be manufactured with minimal deviation from today’s industry standard manufacturing processes. The FinFET transistor indicates we can continue to deliver very high performance products while preserving the basic technology infrastructure our industry relies upon."

AMD's laboratory demonstration of ten nanometer Complementary Metal Oxide Semiconductor Fin Field Effect Transistor (CMOS FinFET) is the outcome of collaborative research between AMD and the University of California, Berkeley with support from the Semiconductor Research Corporation (SRC). The devices were fabricated in AMD’s Submicron Development Center.

"The superior leakage control characteristics make FinFET transistors an attractive candidate for future nano-scale CMOS generations, which are expected to be in manufacturing within the next decade," said Dr. Tsu-Jae King, Associate Professor of Electrical Engineering and Computer Sciences at U.C. Berkeley. “The FinFET device characteristics indicate strong potential for extending the scalability of CMOS technology.”

AMD and the University of California will present the paper, titled "FinFET Scaling to 10 nm Gate Length" at the International Electron Devices Meeting (IEDM) held in San Francisco, December 9-11, 2002.

About AMD
AMD is a global supplier of integrated circuits for the personal and networked computer and communications markets with manufacturing facilities in the United States, Europe, Japan, and Asia. AMD, a Fortune 500 and Standard & Poor’s 500 company, produces microprocessors, Flash memory devices, and support circuitry for communications and networking applications. Founded in 1969 and based in Sunnyvale, California, AMD had revenues of $3.9 billion in 2001. (NYSE: AMD).

AMD on the Web
For more AMD news and product information, please visit our virtual pressroom at www.amd.com/news/virtualpress/index.html. Additional press releases are available at www.amd.com/news/news.html.


TOPICS: Business/Economy; Culture/Society; Extended News; News/Current Events; Technical
KEYWORDS: amd; intel; processors; scalability; transistors

1 posted on 09/10/2002 1:50:41 AM PDT by JameRetief
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To: Ernest_at_the_Beach; rdb3
Technology leap ping.
2 posted on 09/10/2002 1:51:23 AM PDT by JameRetief
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To: JameRetief
BTTT.
3 posted on 09/10/2002 1:58:02 AM PDT by DB
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To: JameRetief
I like the underdog. My two (homemade) computers use AMD chips.
4 posted on 09/10/2002 2:09:52 AM PDT by dennisw
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To: JameRetief
A double-gate transistor structure effectively doubles the electrical current that can be sent through a given transistor.

So I take it that they'll have us use liquid nitrogen to cool this, right?

5 posted on 09/10/2002 2:49:58 AM PDT by rdb3
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Comment #6 Removed by Moderator

Comment #7 Removed by Moderator

To: rdb3
So I take it that they'll have us use liquid nitrogen to cool this, right?

Well, we breath nitrogen more or less don't we? So,it should not be such a big deal to hook up a nitrogen based cooling device to that superdooper double whammy CPU!

8 posted on 09/10/2002 3:05:23 AM PDT by danmar
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To: one_particular_harbour
This looks like good tech and I own the stock.

On heat issues:

The voltage and current usually goes down with the shrinks. This means less per a given number of transistors.

Chips seem hotter bacause of the density of transistors. Even here with heater spreaders and SOI, heat should be less of an issue.
9 posted on 09/10/2002 3:44:16 AM PDT by fooman
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To: dennisw
Dittos here. Cheaper, faster, and a burr under Intel's saddle= win, win , win.
10 posted on 09/10/2002 5:45:01 AM PDT by a history buff
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To: a history buff
No...cooling will be using quantum electron flux heat transfer over a 5 nanometer vacuum gap.....a company headquartered in Gibraltar just got a patent on this.
11 posted on 09/10/2002 7:20:22 AM PDT by spokeshave
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To: spokeshave
No...cooling will be using quantum electron flux heat transfer over a 5 nanometer vacuum gap

But won't we have to re-configure the hyperphasic tachyon emitter arrays at the nano-level to allow the quantum electron flux heat transfer to occur? Well, either that, or modulate the warp engine plasma exhaust coils to the right frequency.



Sorry, couldn't resist the urge to Trek-technobabble :-)

12 posted on 09/10/2002 7:57:12 AM PDT by egarvue
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