Ping!...................
You know, it is hard to believe that memory is perishable and can wear out, but it is...
I remember investigating ferroelectrics for this sort of thing about 30 years ago or so. Maybe now it’s ready for prime time.
Five Russians in a German lab...
What a mix of social, educational, political, and scientific implications and outcomes.
The team employed a technique known as high-energy X-ray photoemission spectroscopy. The specialized methodology developed at MIPT relies on the so-called standing-wave mode of the powerful monochromatic X-ray beam, which requires a synchrotron light source to produce.
...
Now they need to find out how to fit one of those in a phone.
Sounds like it might be EMP-proof.
“A further advantage of ferroelectric memory devices is that external radiation has absolutely no effect on them, unlike their semiconductor-based analogues. This means that the flash-like memory of the future could even weather cosmic ray exposure and operate in outer space.“
Which also would make it interesting to the military, rad hard, probably EMP resistant.
128 bits (carbon do-nuts) on a 4"x 4" frame. Each bit was a carbon do-nut with a positive wire going in one direction to set it to "1" and another wire that passed the opposite direction to set it to "0". These layers were part of a bigger assembly that totaled 1280 bits of memory. The entire assembly took up 2 square feet of space with all the cooling fans attached.
Now you can get terabytes on a device the size of your finger.
My go to non-volatile memory is ink on paper.
All depends on how the process can be scaled in a practical fashion.
COSTING 1000X as much for very high re-writable repetition counts not actually needed by 98% of the market gets you little
Other MAJOR factors like practical environmental limits to data stability come into play.
My usual engineering response : Sounds promising, but PLEASE let us know when you actually are able to make it work as a consumer good.
A good method for measuring the effects, but a company building FeFET based on HfO2 was established in 2016 https://ferroelectric-memory.com/technology/one-transistor-fefet-memory/