Posted on 02/29/2016 2:06:38 PM PST by Ernest_at_the_Beach
Samsung is now mass producing 256-gigabyte (GB) embedded memory based on the UFS 2.0 standard for mobile devices. The new memory features performance for mobile devices that exceeds that of a typical SATA-based SSD for PCs.
“By providing high-density UFS memory that is nearly twice as fast as a SATA SSD for PCs, we will contribute to a paradigm shift within the mobile data storage market,” said Joo Sun Choi, Executive Vice President, Memory Sales and Marketing, Samsung Electronics. “We are determined to push the competitive edge in premium storage line-ups – OEM NVMe SSDs, external SSDs, and UFS – by moving aggressively to enhance performance and capacity in all three markets.”
The new Samsung UFS memory satisfies needs for ultra-fast speed, large data capacity and compact chip size in high-end smartphones. It is based on the company’s most advanced V-NAND flash memory chips and a specially-designed high-performance controller. The UFS memory handles up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively, over two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.
For sequential reading, the 256GB UFS takes advantage of two lanes of data transfer to move data at up to 850MB/s, which is nearly twice as fast as a typical SATA-based SSD used in PCs. In terms of sequential writing, it supports up to 260MB/s, which is approximately three times faster than high-performance external micro SD cards.
As a result, the new 256GB UFS memory is capable of supporting seamless Ultra HD video playback and multitasking functionality on large-screen mobile devices, such as watching 4K Ultra HD movies on a split screen, while searching image files or downloading video clips. Its 256GB capacity also allows an unmatched amount of data storage on the mobile device itself. For example, one 256GB UFS chip can store about 47 full HD movies, therefore enabling much greater flexibility in handheld consumer electronics.
In addition, with the advent of next-generation smartphones that support the USB 3.0 interface, users will be able to transfer data much faster between mobile devices. The USB 3.0 interface will allow sending a 5GB-equivalent Full-HD video clip (average 90-min. movie size) in 12 seconds. Within this new storage environment, mobile users will get to take full advantage of the performance benefits of Samsung’s latest UFS memory.
Using Samsung’s advanced memory technology, the new UFS memory chips are extremely compact, even smaller than an external micro SD card, giving greater flexibility to smartphone designers.
Samsung announced availability of its 128GB UFS memory in February of last year. In only a year, it has doubled the capacity and speed of UFS memory, which should spur further growth of the mobile marketplace. Samsung will extend its premium storage line-ups that are based on its advanced V-NAND flash memory including the new 256GB UFS, and increase their production volume in line with increases in global demand.
From the comments
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#5236178 Posted on: 02/25/2016 04:07 PM
LOL!
Technology moving forward in Big and Small ways!!!
You are skeptical?
Apple will sue them and steal half the profits.
No, just your comment made me laugh.
In context with the story it was pretty funny!
Some of those speeds quoted in the article made my Jaw drop....so to say!
Ping a couple of techies and see if they agree with me.
I want this in my next Galax note Smartphone!
Sitting at 32 GBytes in my note 4, waiting of r the next Galaxy note 6...only a rumor at this point,!
Not shocking at all. The key is they have two channels so they are “gaming” it a bit. Basically take the fastest SSD today and RAID-0 it. Then you have what they are talking about (somewhat).
Samsung is going to do HBN ,,,,High Band Width memory ,, designed by AMD and on the Radeon Fury Video Cards ,,,but on stack of those are only 1 Gigabyte,...
Looking for a good story of the internals as to how they are doing this in a micro flash card....
Sounds great. What about reliability though? Had quite a few USB thumb drives die on me in the past years. No data loss the way I used them, but annoying nonetheless. Pushing performance always sounds like greater failure risk to me...
Their 850 SSD with V-NAND is the very high endurance and reliability and is stacked memory. I assume this is also....but must have even more stacking.
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